Effect of nonstoichiometry on Raman scattering of VO2 films

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, , Citation Yuan Hong-Tao et al 2004 Chinese Phys. 13 82 DOI 10.1088/1009-1963/13/1/015

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1 Changchun University of Science and Technology, Changchun 130022, China

2 Institute of Physics,Chinese Academy of Sciences, Beijing 100080, China

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  1. Received 4 June 2003
1009-1963/13/1/82

Abstract

We report on Raman scattering of VO2 films prepared by radio frequency magnetron sputtering under different conditions. Our investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO2 films, compared with the stoichiometry VO2 films. The experimental evidence is presented and the cause for nonstoichiometry dependence of Raman spectra of VO2 films is discussed.

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