Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates

Time-resolved photoluminescence (PL) was studied to determine the radiative recombination lifetimes in InAs/GaAs quantum dots (QDs) fabricated on misoriented substrates by the Stransky-Krastanov method. The intensity of PL from the ground state, excited state and wetting layer of QD was also studied as a function of the excitation density. Measured lifetimes were as high as 3.1 ns. The measurements have clearly demonstrated the band state filling effect: it also provides the possibility of estimating the excitation power density corresponding to the manifestation of this effect at the excitation power of 30 A cm^-2.