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Defect switching in a mesoscopic sample induced by a scanning tunnelling microscope

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Published under licence by IOP Publishing Ltd
, , Citation S E Kubatkin et al 1994 J. Phys.: Condens. Matter 6 L473 DOI 10.1088/0953-8984/6/33/001

0953-8984/6/33/L473

Abstract

A new method is introduced to study electron transport on the mesoscopic scale. A scanning tunnelling microscope (STM) tip is used both to form a point-contact potential probe to a thin film and to affect scattering centres in its vicinity. We detect abrupt changes in the voltage with this probe as a function of both tip position and tip-sample voltage. These changes could be interpreted as due to spatial shifts of scattering centres in the film surface.

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10.1088/0953-8984/6/33/001