The thermostability of the Fe₁₆N₂ phase deposited on a GaAs substrate by ion-beam-assisted deposition

An Fe-N film was deposited on a GaAs(100) substrate by ion-beam-assisted deposition at an N/Fe atomic arrival ratio of 0.12. The results from X-ray diffraction showed that the film consisted of the Fe₁₆N₂ phase. The results of an annealing experiment indicated that the Fe₁₆N₂ phase formed is stable after annealing at 150 degrees C. At 200 degrees C, the Fe₁₆N₂ started to decompose to alpha -Fe and gamma '-Fe₄N. And it converted to alpha -Fe and gamma '-Fe₄N completely at 300 degrees C. The magnetic properties of films annealed at different temperatures were also measured and the results are discussed.