The tracer diffusion of Ge in Ni single crystals

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, , Citation S Mantl et al 1983 J. Phys. F: Met. Phys. 13 1441 DOI 10.1088/0305-4608/13/7/014

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1 Argonne Nat. Lab., Argonne, IL, USA

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Abstract

The diffusion of 68Ge in single crystals of high-purity (over 99.99% pure) Ni has been measured using the sectioning technique. The plot of log D versus 1/T is straight from 939 to 1675K, over 61/2 orders of magnitude in D, with parameters D0=2.10+or-0.47 cm2 s-1, Q=2.74+or-0.03 eV (264+or-3 kJ mol-1). The data suggest a low Ge-vacancy binding enthalpy for Ni.

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