Device physics of quantum well infrared photodetectors

Published under licence by IOP Publishing Ltd
, , Citation B F Levine 1993 Semicond. Sci. Technol. 8 S400 DOI 10.1088/0268-1242/8/1S/089

0268-1242/8/1S/S400

Abstract

The author presents a detailed study of a wide variety of quantum well infrared photodetectors, which were chosen to have large differences in their optical and transport properties. Intersubband transitions based on photoexcitation from bound-to-bound, bound-to-quasicontinuum and bound-to-continuum quantum well states were investigated. The measurements and theoretical analysis included optical absorption, responsivity, dark current, current noise, optical gain, hot-carrier mean free path, net quantum efficiency, quantum well escape probability, quantum well escape time, as well as detectivity.

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10.1088/0268-1242/8/1S/089