Simplified chemical deposition technique for good quality SnS thin films

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Published under licence by IOP Publishing Ltd
, , Citation M T S Nair and P K Nair 1991 Semicond. Sci. Technol. 6 132 DOI 10.1088/0268-1242/6/2/014

0268-1242/6/2/132

Abstract

A chemical deposition technique, much simpler and more versatile than previously reported and capable of yielding good quality SnS films of thickness up to approximately=1.2 mu m under a choice of deposition conditions, is presented. The as-prepared films are polycrystalline with p-type dark conductivity in the range 10-5-10-4 Omega -1 cm-1 for the thicker ( approximately 1 mu m) films and showing a photocurrent to dark current ratio of 5-10 under 500 W m-2 tungsten halogen illumination. The optical transmittance and reflectance spectra and the photocurrent response curves of a series of SnS samples are explicitly presented to provide insight into possible applications of these films.

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10.1088/0268-1242/6/2/014