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R H Blick1, T Schmidt1, R Haug1 and K von Klitzing1
Published under licence by IOP Publishing Ltd
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Citation R H Blick et al 1996 Semicond. Sci. Technol. 11 1506
DOI 10.1088/0268-1242/11/11S/009
Tunnelling through single and coupled GaAs quantum dots is used to analyse the electronic properties of artificial atoms and molecules. In addition we demonstrate that a strongly localized dot can be used as a spectrometer with high spatial and energy resolution for the determination of the local density of states in a disordered semiconductor.
