Highly c-Oriented Nanocolumn Structure ZnO Films on Sapphire Substrates by Pulsed Laser Deposition

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Published under licence by IOP Publishing Ltd
, , Citation Liu Zhi-Fu et al 2004 Chinese Phys. Lett. 21 747 DOI 10.1088/0256-307X/21/4/045

0256-307X/21/4/747

Abstract

Highly c-oriented nanocolumn structure ZnO films were successfully deposited on sapphire (0001) substrates by pulsed laser deposition at a substrate temperature of 500 degrees C and 200 mTorr oxygen pressure. X-ray diffraction, scanning electron microscopy, photoluminescence, and spectroscopic ellipsometry were used to characterize the ZnO films. The as-grown film is composed of well-aligned ZnO columns with diameters about 200–300 nm. Photoluminescence spectrum of the ZnO film exhibits a strong near-band-edge emission and a weak deep-level emission band. The optical refractive indices and the extinction coefficients are obtained by fitting the spectroscopic ellipsometry data using the Forouhi–Bloomer dispersion relation.

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10.1088/0256-307X/21/4/045