Diffusion of Ion Implanted As in Si1-xGex Epilayers

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, , Citation Zou Lü-fan (Zou Lyu-fan) et al 1997 Chinese Phys. Lett. 14 51 DOI 10.1088/0256-307X/14/1/014

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1 Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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  1. Received 2 June 1996
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0256-307X/14/1/51

Abstract

Diffusion of implanted As ion in relaxed Si1-xGex was studied as a function of Ge content over a wide range of Ge fractions (0-43%) and annealing temperature, and was compared to diffusion in Si. Experimental results showed that the As diffusion is enhanced with increasing annealing temperature for certain Ge content and strongly dependent on the higher Ge content and the faster As diffusion.

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