Abstract
The luminescence intensity of Pr3+ varies dramatically with the Al mole fraction in Pr-implanted AlxGa1-xAs. Two groups of major luminescence peaks have been observed near 1.6 and 1.3 μm, which can be attributed to the transitions of 3F3 → 3H4 and 1G4 → 3H5 of Pr3+, respectively. For GaAs, the luminescence peak intensity near 1.3 μm is strong and the peak intensity near 1.6 μm is weak, whereas the opposite has generally been observed for AlxGa1-xAs. Furthermore, only Al0.15Ga0.85As shows very strong luminescence peaks near 1.6 μm. This may be explained with a proposed excitation model for the 4f-electron of Pr3+ in AlxGa1-xAs.
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