Abstract
In this paper, we report optical studies of nitrogen doped ZnSe epilayers grown by molecular beam epitaxy. Photoluminescence spectra of the donor-acceptor pair region at different temperatures and different carrier concentrations show that two donors are present in the samples, residual shallow donors with activation energy 26 meV and deep donors with activation energy of 46 meV previously assigned to a VSe-Zn-NSe complex. In the exciton region we observe a new emission at 2.765 eV and the intensity increases when the epilayer is compensated by the deep donor. We therefore propose that this transition is related to a deep donor bound exciton. Excitation power dependent photoluminescence measurements show the presence of two deep transitions separated by 23 meV at low excitation intensities which we propose are due to deep donor-acceptor pairs.
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