A simple new technique for preparing STM tips

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, , Citation Yufeng Chen et al 1989 J. Phys. E: Sci. Instrum. 22 455 DOI 10.1088/0022-3735/22/7/009

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1 Dept. of Phys., Fudan Univ., Shanghai, China

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0022-3735/22/7/455

Abstract

A new improved DC etching method for fabricating sharp tungsten tips for scanning tunnelling microscopy and field ion microscopy is discussed. Instead of the conventional current method, differential control of the etching current is used. it reliably produces tungsten tips with radius about 40 nm and aspect ratio near unity for wire diameters up to 0.66 mm.

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