Auger layer growth calculations for A/B/A heterostructures

Auger electron spectroscopy has been applied to determine the near-surface composition of thin A/B/A heterostructures. General equations are established in terms of inelastic mean free path ratios for presumed layer growth conditions, for an analyser geometry which can be specified in terms of a sample tilt angle and ranges of take-off angles . Use of a controlled glancing incidence, in conjunction with RHEED, gives high surface sensitivity. Applications to the technically interesting systems Si/Ge/Si(100) and Fe/Ag/Fe(110) are given; comparison with experiment is used to infer the growth morphology, extent of surface segregation and interdiffusion.