Abstract
Amorphous silicon thin films have been deposited by a new chemical vapour deposition process using iodosilane precursors at atmospheric pressure. Fourier transform infrared, ultraviolet/visible, electron spin resonance and Rutherford backscattering spectroscopies along with scanning electron microscopy and resistivity measurements were used to determine some of the properties of films that were prepared under various conditions and subjected to post-deposition treatments. It was found that the dangling bond density could be decreased by post-deposition heat treatment in an atmosphere of hydrogen or argon.
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