Preparation of ohmic contacts to semiconducting diamond

Low resistance ohmic contacts were manufactured on a natural semiconducting diamond (type IIb), by implanting boron ions at a temperature of 200 degrees C. This was followed by annealing at 1200 degrees C and removal of the top ion-damaged layer by etching in a hot acids solution. The thin, highly doped surface which remained could then be contacted with metals which need not interact chemically with the diamond surface.