Investigation of traps and minority-carrier diffusion length in n-CdSe films

Space-charge-limited current in the Au/CdSe/Ni structure has been studied to determine the trap depth and density in electro-deposited n-CdSe films. A high density of shallow traps was observed. Donor concentration, band bending and minority-carrier diffusion length measurements were carried out by studying the photocurrent-voltage characteristics of an n-CdSe film/electrolyte rectifying barrier using a 5 mW He-Ne laser for illumination. These parameters have been correlated with the observed performance of solar cells. The influence of annealing on the physical properties is also discussed.