Abstract
Using an evaporation chamber equipped with a ZnSe compound source, we have grown ZnSe on GaAs(001) and characterized the surface using low-energy electron diffraction (LEED), Raman scattering spectroscopy and reflectance anisotropy spectroscopy (RAS). High-quality layers of ZnSe were obtained and revealed by LEED to have a c(2*2) surface reconstruction and the RAS spectra were measured. The RAS spectra proved to be reproducible when a similar surface was obtained by de-capping a Se-capped ZnSe(001) sample.
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