The Schottky barrier height at the CoSi2/Si(111) interface

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, , Citation N V Rees and C C Matthai 1988 J. Phys. C: Solid State Phys. 21 L981 DOI 10.1088/0022-3719/21/27/002

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1 Dept. of Phys., Univ. Coll., Cardiff, UK

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0022-3719/21/27/L981

Abstract

The Schottky barrier height for the CoSi2/Si(111) interface is calculated using a tight-binding theory. It is found that the barrier height is 0.55 eV for the model with fivefold-coordinated Co atoms at the interface and 0.13 eV for the model with eightfold-coordinated Co atoms at the interface.

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