Abstract
This paper proposes the charge plasma based dual electrode doping-less tunnel FET (DEDLTFET). The paper compares the device performance of the conventional doping-less TFET (DLTFET) and doped TFET (DGTFET). DEDLTEFT gives the superior results with high ON state current (ION ∼ 0.56 mA/μm), ION/IOFF ratio ∼ 9.12 × 1013 and an average subthreshold swing (AV-SS ∼ 48 mV/dec). The variation of different device parameters such as channel length, gate oxide material, gate oxide thickness, silicon thickness, gate work function and temperature variation are done and compared with DLTFET and DGTFET. Through the extensive analysis it is found that DEDLTFET shows the better performance than the other two devices, which gives the indication for an excellent future in low power applications.