Terahertz response of an InGaAs/AlAs resonant tunnelling diode

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Published under licence by IOP Publishing Ltd
, , Citation J S Scott et al 1994 Semicond. Sci. Technol. 9 530 DOI 10.1088/0268-1242/9/5S/035

0268-1242/9/5S/530

Abstract

We have measured the broad-band terahertz response of a state-of-the-art InGaAs/AlAs resonant tunnelling diode from 120 GHz to 3.9 THz using the free-electron lasers at the University of California, Santa Barbara. A tungsten whisker antenna in a conventional probe station is used to couple the far-infrared radiation into the device. By normalizing the rectified response in the resonant tunnelling regime with the off-resonant response we are able to remove the antenna frequency effects and the frequency dependence controlled by the much slower RC time constant and measure the relaxation time due to the quantum inductance.

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10.1088/0268-1242/9/5S/035