Deep p-n junction in Hg_1-xCd_xTe created by ion milling

Thick n-type layers near the surface of p-Hg_1-xCd_xTe produced as a result of low energy ion milling have been investigated. EBIC measurements of cleaved cross sections show the depth and shape or the p-n junction under the surface of (HgCd)Te. An analysis of the n-type layers by differential Hall effect measurements is reported. It was found that the electron concentration in the n-type layer is of the order of 10¹⁵ cm^-3 and is nearly constant from the surface to the p-n junction. A diminishing density of etch pits was found on the surfaces influenced by ion milling. A model for the p-n conversion during ion milling is discussed.