Memory switching in SiO films with Ag and Co electrodes

Reversible memory switching in evaporated SiO films with one Co and one Ag electrode was investigated. The high-impedance state was more than 10⁹ Ω; the low-impedance state about 300 Ω. A rectified sine wave was used as a switching pulse in one direction and a short square-wave pulse in the other. The switching characteristics at different repetition rates and the properties of the low-impedance state suggest metal diffusion from the electrodes. A model for explaining the memory effect is presented.