Dielectric constant epsilon (o) of Ga(1-x)AlxSb compound

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, , Citation C Ance and A Nguyen Van Mau 1976 J. Phys. C: Solid State Phys. 9 1565 DOI 10.1088/0022-3719/9/8/027

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1 Lab. de Spectroscopie II, Univ. des Sci. et Techniques du Languedoc, Montpellier, France

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0022-3719/9/8/1565

Abstract

The reflectivity of the compound Ga(1-x)AlxSb has been measured at room temperature for different x, from 0.5 to 1.3 eV. The value of epsilon (o) has been calculated using the refractive index n=(1+ square root R)/(1- square root R). A non-linear composition dependence is reported. A model of calculation of epsilon (o) is proposed taking into account the energies of transitions E0 and E2.

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10.1088/0022-3719/9/8/027