The diffusion of beryllium into GaAs during liquid phase epitaxial growth of beryllium‐doped p‐Ga0.2Al0.8As is investigated. The diffusion coefficient D takes the form D=D0 exp(−E0/kT), where D0=11.2 cm2 sec−1 and E0=2.43 eV.
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© 1980 American Institute of Physics.
1980
American Institute of Physics
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