Fe ions were implanted into Ge (110) using a metal vapor vacuum arc ion source. The samples were characterized by Rutherford backscattering spectrometry (RBS), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and superconducting quantum interference device magnetometry. The crystalline quality of the implanted layer was identified by RBS random/channeling measurements. The depth profile of the implanted Fe ions was obtained by AES. Low dose implantation causes formation of Fe–Ge precipitates whereas high dose implantation causes formation of Fe precipitates in the implanted layer as confirmed by TEM and XPS measurements. Magnetic measurements show the superparamagnetism of the Fe and Fe–Ge clusters at high temperatures.
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1 February 2002
Research Article|
February 01 2002
Structural and magnetic properties of Fe–Ge layer produced by Fe ion-implantation into germanium
R. Venugopal;
R. Venugopal
Department of Electronic Engineering, The Chinese University of Hong Kong, Sha tin, New Territories, Hong Kong
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B. Sundaravel;
B. Sundaravel
Department of Electronic Engineering, The Chinese University of Hong Kong, Sha tin, New Territories, Hong Kong
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I. H. Wilson;
I. H. Wilson
Department of Electronic Engineering, The Chinese University of Hong Kong, Sha tin, New Territories, Hong Kong
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F. W. Wang;
F. W. Wang
Department of Physics and Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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X. X. Zhang
X. X. Zhang
Department of Physics and Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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J. Appl. Phys. 91, 1410–1416 (2002)
Article history
Received:
June 07 2001
Accepted:
October 23 2001
Citation
R. Venugopal, B. Sundaravel, I. H. Wilson, F. W. Wang, X. X. Zhang; Structural and magnetic properties of Fe–Ge layer produced by Fe ion-implantation into germanium. J. Appl. Phys. 1 February 2002; 91 (3): 1410–1416. https://doi.org/10.1063/1.1427135
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