High performance nonvolatile memory devices based on Cu_2−xSe nanowires

We report on the rational synthesis of one-dimensional Cu_2−xSe nanowires (NWs) via a solution method. Electrical analysis of Cu_2−xSe NWs based memory device exhibits a stable and reproducible bipolar resistive switching behavior with a low set voltage (0.3–0.6 V), which can enable the device to write and erase data efficiently. Remarkably, the memory device has a record conductance switching ratio of 10⁸, much higher than other devices ever reported. At last, a conducting filaments model is introduced to account for the resistive switching behavior. The totality of this study suggests that the Cu_2−xSe NWs are promising building blocks for fabricating high-performance and low-consumption nonvolatile memory devices.