We present a detailed study of the electronic properties of individual silicon nanocrystals elaborated by low-pressure chemical vapor deposition on 1.2 nm thick grown on Si (100). The combination of ultrathin oxide layers and highly doped substrates allows the imaging of the hemispherical dots by scanning tunneling microscopy. Spectroscopic studies of single dots are made by recording the curves on the Si nanocrystal accurately selected by a metallic tip. These curves exhibit Coulomb blockade and resonant tunneling effects. Coulomb pseudogaps between 0.15 and 0.2 V are measured for different dots. Capacitances between 0.2 and 1 aF and tunnel resistances around are deduced from the width and height of the staircases. The charging and confinement energies deduced from the curves are in good agreement with a modified orthodox model which includes the quantification of electronic levels.
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20 August 2001
Research Article|
August 20 2001
Single-electron charging effect in individual Si nanocrystals
T. Baron;
T. Baron
Laboratoire de Physique de la Matière, CNRS-INSA Lyon, 20 Avenue Albert Einstein, 69621 Villeurbanne Cedex, France
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P. Gentile;
P. Gentile
Département de Recherche Fondamentale, CEA-Grenoble, 17 Rue des Martyrs, F-38054 Grenoble, France
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N. Magnea;
N. Magnea
Département de Recherche Fondamentale, CEA-Grenoble, 17 Rue des Martyrs, F-38054 Grenoble, France
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P. Mur
P. Mur
CEA-Leti Département des Technologies Silicium, 17 Rue des Martyrs, F-38054 Grenoble, France
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Appl. Phys. Lett. 79, 1175–1177 (2001)
Article history
Received:
March 29 2001
Accepted:
June 13 2001
Citation
T. Baron, P. Gentile, N. Magnea, P. Mur; Single-electron charging effect in individual Si nanocrystals. Appl. Phys. Lett. 20 August 2001; 79 (8): 1175–1177. https://doi.org/10.1063/1.1392302
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