It is shown theoretically that the recently observed spontaneous ordering of III‐V alloys that yields alternate monolayer (111) superlattices provides the opportunity for achieving infrared band gaps in systems such as (InAs)1(InSb)1 and (GaSb)1(InSb)1. A substantial reduction in the direct band gap is predicted to result from the L‐point folding that repel the Γ band‐edge states.

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17.
The band gap of a random (R) InAs0.5Sb0.5 alloy is estimated using the formula Eg(R) = E¯g−1/4b, where g is the averaged band gap of the binary constituents (Table II) and b≈0.6 eV (Ref. 16) is the bowing parameter.
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