Prospects for ion bombardment and ion implantation in GaAs and InP device fabrication
Prospects for ion bombardment and ion implantation in GaAs and InP device fabrication
- Author(s): D.V. Morgan ; F.H. Eisen ; A. Ezis
- DOI: 10.1049/ip-i-1.1981.0033
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- Author(s): D.V. Morgan 1 ; F.H. Eisen 2 ; A. Ezis 1
-
-
View affiliations
-
Affiliations:
1: Department of Electrical & Electronic Engineering, University of Leeds, Leeds, UK
2: Department of Electrical & Electronic Engineering, Rockwell International, Thousand Oaks, USA
-
Affiliations:
1: Department of Electrical & Electronic Engineering, University of Leeds, Leeds, UK
- Source:
Volume 128, Issue 4,
August 1981,
p.
109 – 130
DOI: 10.1049/ip-i-1.1981.0033 , Print ISSN 0143-7100, Online ISSN 2053-7980
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In the review the processes of ion implantation and ion damage in GaAs and InP are considered. A survey of the basic physics of the implantation/damage processes is outlined together with detailed studies on the annealing required to activate the ions for semiconductor doping. The prospects and current achievements of this technological process in device fabrication are discussed in detail.
Inspec keywords: ion implantation; III-V semiconductors; gallium arsenide; indium compounds; reviews
Other keywords:
Subjects: Reviews and tutorial papers; resource letters; Ion beam effects; Doping and implantation of impurities; Semiconductor doping; II-VI and III-V semiconductors
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