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Experimental study and simulations on two different avalanche modes in trench power MOSFETs

Experimental study and simulations on two different avalanche modes in trench power MOSFETs

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© The Institution of Engineering and Technology
Published

The avalanche behaviour of a new trench power MOSFET was investigated with the help of measurements and electro-thermal device simulation techniques. Two different destruction regimes were identified experimentally: energy-related destruction and current-related destruction. Possible simulation approaches to account for the different effects were proposed. The corresponding results agreed well with measurements. Furthermore, the simulations qualitatively predicted the experimental results' dependence of avalanche behaviour on design parameters.

Inspec keywords: semiconductor device models; avalanche breakdown; power MOSFET

Other keywords: electro-thermal device simulation; trench power MOSFET; current-related destruction; avalanche behaviour; energy-related destruction

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Insulated gate field effect transistors; Power semiconductor devices

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