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SOI high-voltage device with step thickness sustained voltage layer

SOI high-voltage device with step thickness sustained voltage layer

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© The Institution of Engineering and Technology
Published

A new SOI high-voltage device with a step thickness sustained voltage layer (ST SOI) is proposed. The electric field in the drift region is modulated, and that in the buried layer is enhanced by the variable-thickness SOI layer, resulting in enhancement of breakdown voltage (BV). BV for the ST SOI with two steps is twice as high as that of the conventional SOI, maintaining the low on-resistance (Ron).

Inspec keywords: electric breakdown; silicon-on-insulator

Other keywords: breakdown voltage; electric field; step thickness sustained voltage layer; SOI high-voltage device; drift region

Subjects: Metal-insulator-semiconductor structures; Dielectric breakdown and discharges

References

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      • Funaki, H., Yamaguchi, Y., Hirayama, K.: `New 1200 V MOSFET structure on SOI with SIPOS shielding layer', Proc. IEEE Int. Symp. Power Semiconductor Devices ICs, 1998, Kyoto, Japan, p. 25–28.
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      • I.J. Kim , S. MatSumoto , T. Sakai . Breakdown voltage improvement for thin-film SOI power MOSFET's by a buried oxide step structure. IEEE Electron Device Lett. , 5 , 148 - 150
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      • Sunkavalli, R., Tamba, A., Baliga, B.J.: `Step drift doping profile for high voltage DI lateral power devices', Proc. Int. SOI Conf., 1995, Tucson, Arizona, USA, p. 139–140.
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