Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

2 W/mm output power density at 1 GHz for diamond FETs

2 W/mm output power density at 1 GHz for diamond FETs

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© IEE
Published

Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 µm and gate width of 100 µm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.

Inspec keywords: UHF field effect transistors

Other keywords: power density; 1 GHz; diamond FET; UHF; 100 micron; 10.9 dB; 0.1 micron; high-purity source gas; field effect transistor; diamond homoepitaxial layer

Subjects: Solid-state microwave circuits and devices; Insulated gate field effect transistors

References

    1. 1)
    2. 2)
      • J. Isberg , J. Hammersberg , E. Johansson , T. Wikstrom , D.J. Twitchen , A.J. Whitehead , S.E. Coe , G.A. Scarsbook . High carrier mobility in single-crystal plasma-deposited diamond. Science , 1670 - 1672
    3. 3)
      • E. Kohn , W. Ebert , B. Dischler . (1998) Electronic devices on CVD diamond, Low-pressure synthetic diamond.
    4. 4)
    5. 5)
    6. 6)
      • L.F. Eastman , U.K. Mishra . The toughest transistor yet. IEEE Spectr. , 28 - 33
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20053194
Loading

Related content

content/journals/10.1049/el_20053194
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address