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GaAs MESFET distributed baseband amplifier IC with allpass filter network

GaAs MESFET distributed baseband amplifier IC with allpass filter network

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A distributed baseband amplifier integrated circuit (IC) which uses an allpass-filter configuration and three-dimensional transmission lines is described. An IC fabricated using 0.1 µm gatelength GaAs MESFETS has a 0 to > 62.5 GHz bandwidth with a flat gain of 10 dB. Its group delay variation in the 0-50 GHz band is only 12.4 ps. This is ~17 ps smaller than that of a conventional distributed baseband amplifier IC.

References

    1. 1)
      • S. Kimura , Y. Imai . 0–40 GHz GaAs MESFET distributed baseband amplifierICs for high-speed optical transmission. IEEE Trans. , 2076 - 2082
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      • Waasen, S.V.: `27 GHz bandwidth high speed monolithicintegrated optoelectronic photoreceiver consisting of a waveguide fed photodiodeand an InAlAs/InGaAs-HFET-traveling wave amplifier', 1996 IEEEGaAs IC Symp. Dig., November 1996, p. 258–261.
    3. 3)
      • S. Kimura , Y. Imai , Y. Miyamoto . Direct-coupled distributed basebandamplifier IC's for 40-Gbit/s optical communication. IEEE J. Solid-State Circuits , 1374 - 1379
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      • Yamaguchi, S.: `Aninverted microstrip line IC structure for ultra high-speed applications', TH4E-7, IEEE MTT-S Int. Microw. Symp. Dig., May 1995, 3, p. 1643–1646.
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      • Nishimura, K.: `Highperformance 0.1 µm-self-aligned-gate MESFET technology', Proc. 26th EuropeanSolid State Dev. Res. Conf., September 1996, p. 865–868.
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      • Yano, Y.: `2.6 terabit/s WDM transmission experiment using optical duobinary coding', 22nd Euro. Conf. on Opt. Commun., ECOC'96, September 1996, p. 5.3–5.6.
    7. 7)
      • Yamane, Y.: `0.1 µm GaAs MES-FET'sfabricated using ion-implantation and photo-lithography', 1993 IEEE GaAsIC Symp. Dig., October 1993, p. 117–120.
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