GaAs MESFET distributed baseband amplifier IC with allpass filter network
A distributed baseband amplifier integrated circuit (IC) which uses an allpass-filter configuration and three-dimensional transmission lines is described. An IC fabricated using 0.1 µm gatelength GaAs MESFETS has a 0 to > 62.5 GHz bandwidth with a flat gain of 10 dB. Its group delay variation in the 0-50 GHz band is only 12.4 ps. This is ~17 ps smaller than that of a conventional distributed baseband amplifier IC.