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Monolithic 1.3 µm resonant cavity light emitting diode grown by solid source molecular beam epitaxy

Monolithic 1.3 µm resonant cavity light emitting diode grown by solid source molecular beam epitaxy

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Published

A monolithic 1.3 µm resonant cavity light emitting diode grown by solid source molecular beam epitaxy is demonstrated. The diode has a 1λ thick GaInAsP optical cavity active region surrounded by GaInAsP distributed Bragg reflectors. The device exhibits strong spontaneous emission with a narrow linewidth of 13 nm. The results also clearly demonstrate the accuracy of solid source molecular beam epitaxy for the growth of complex and thick GaInAsP-based device structures.

Inspec keywords: light emitting diodes; gallium arsenide; spontaneous emission; III-V semiconductors; molecular beam epitaxial growth; cavity resonators; aluminium compounds; indium compounds

Other keywords: growth; GaInAsP optical cavity active region; solid source molecular beam epitaxy; AlGaInAsP; linewidth; GaInAsP distributed Bragg reflectors; monolithic 1.3 μm resonant cavity light emitting diode; GaInAsP-based device structures; 1.3 mum; spontaneous emission

Subjects: Light emitting diodes; Epitaxial growth

References

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