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40 Gbit/s EAM driver IC in SiGe bipolar technology

40 Gbit/s EAM driver IC in SiGe bipolar technology

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Published

An SiGe bipolar IC for directly driving a differential electroabsorption modulator in a 40 Gbit/s fibre optic TDM system is presented. An adjustable modulator bias voltage (0 to –2 V) is generated on-chip by a novel active network in the output stage. Clear eye diagrams at 40 Gbit/s and output swings up to 2.5 Vpp (nominal 2 Vpp) were measured on mounted chips.

Inspec keywords: semiconductor materials; electro-optical modulation; bipolar integrated circuits; optical communication equipment; electroabsorption; driver circuits; Ge-Si alloys; digital communication; time division multiplexing

Other keywords: 0 to -2 V; 40 Gbit/s; adjustable modulator bias voltage; active network; 2.5 V; SiGe; SiGe bipolar technology; fibre optic TDM system; driver IC; differential electroabsorption modulator

Subjects: Electro-optical devices; Bipolar integrated circuits; Optical communication

References

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      • H.-M. Rein , M. Möller . Design considerations for very-high-speed Si-bipolar ICs operating upto to 50 Gb/s. IEEE J. Solid-State Circuits , 8 , 1076 - 1090
    2. 2)
      • Meister, T.F.: `SiGe base bipolar technology with 74 GHz f', Tech. Dig. IEDM '95, December 1995, Washington, p. 739–742.
    3. 3)
      • Gottwald, E.: `Towards a 40 Gbit/s electrical time division multiplexed optical transmissionsystem', Proc. ICCT, May 1996, Beijing, China, p. 60–63.
    4. 4)
      • Lao, Z.: `High power modulatordriver ICS up to 30 Gb/s with AlGaAs/GaAs HEMTs', GaAs IC Symp. Tech. Dig., 1997, p. 223–226.
    5. 5)
      • M. Meghelli . 30 Gbit/s InP DHBT2:1 selector-driver IC for external laser modulation. Electron. Lett. , 1057 - 1058
    6. 6)
      • H.-M. Rein , R. Schmid , P. Weger , T. Smith , T. Herzog , R. Lachner . A versatile Si-bipolar driver circuit with high output voltage swingfor external and direct modulationof laser diodes in 10 Gb/s optical-fiber links. IEEE J. Solid-State Circuits , 1014 - 1021
    7. 7)
      • R. Schmid . 23 Gbit/s SiGe modulator driverwith 3.5 V single-ended output swing. Electron. Lett.
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