Waveguide integrated 1.55 µm photodetector with 45 GHz bandwidth
Waveguide integrated 1.55 µm photodetector with 45 GHz bandwidth
- Author(s): A. Umbach ; D. Trommer ; G.G. Mekonnen ; W. Ebert ; G. Unterbörsch
- DOI: 10.1049/el:19961425
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- Author(s): A. Umbach 1 ; D. Trommer 1 ; G.G. Mekonnen 1 ; W. Ebert 1 ; G. Unterbörsch 1
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View affiliations
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Affiliations:
1: Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, Berlin, Germany
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Affiliations:
1: Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, Berlin, Germany
- Source:
Volume 32, Issue 23,
7 November 1996,
p.
2143 – 2145
DOI: 10.1049/el:19961425 , Print ISSN 0013-5194, Online ISSN 1350-911X
Evanescently coupled, waveguide integrated photodiodes were fabricated on InP. The device design is intended to provide ultrafast photoresponse together with a high responsivity. A 3 dB bandwidth of 45 GHz and 90% internal quantum efficiency is achieved at 1.55 µm wavelength. High-speed operation with linear power response is obtained at power levels as high as 5 mW.
Inspec keywords: indium compounds; photodetectors; p-i-n photodiodes; III-V semiconductors; optical receivers; optical planar waveguides; optical fibres
Other keywords:
Subjects: Optical communication; Integrated optics; Fibre optics; Photoelectric devices
References
-
-
1)
- E.H. Böttcher , D. Bimberg . Millimeter wave distributed metal-semiconductor-metalphotodetectors. Appl. Phys. Lett. , 26 , 3648 - 3650
-
2)
- D. Trommer , A. Umbach , W. Passenberg , G. Unterbörsch . A monolithically integratedbalanced mixer OEIC on InP for coherent receiver applications. IEEE Photonics Technol. Lett. , 1038 - 1040
-
3)
- K.S. Giboney , R.L. Nagarajan , T.E. Reynolds , S.T. Allen , R.P. Mirin , M.J.W. Rodwell , J.E. Bowers . Travelling-wave photodetectors with 172 GHz bandwidth and 76 GHzbandwidth-efficiency product. IEEE Photonics Technol. Lett. , 4 , 412 - 414
-
4)
- D. Wake , R.H. Walling , I.D. Henning , D.G. Parker . Planar-junction, top-illuminatedGaInAs/InP pin photodiode with bandwidth of 25 GHz. Electron. Lett. , 15 , 967 - 968
-
5)
- P. Albrecht , H. Heidrich , R. Löffler , L. Mörl , F. Reier , C.M. Weinert . Integration ofpolarisation independent mode transformers with uncladded InGaAsP/InP ribwaveguides. Electron. Lett. , 13 , 1196 - 1198
-
6)
- Lin, L.Y., Wu, M.C., Itoh, T., Vang, T.A., Muller, R.E., Sivco, D.L., Cho, A.Y.: `Velocity-matcheddistributed photodetectors with high saturation power and large bandwidth', Proc. 54th Device Research Conf., DRC '96, 24-26 June 1996, Santa Barbara, CA, p. 196–197.
-
7)
- C. Bornholdt , W. Döldissen , F. Fiedler , R. Kaiser , K. Kowalski . Waveguide-integratedp-i-n photodiode on InP. Electron. Lett. , 1 , 2 - 3
-
8)
- K. Kato , A. Kozen , Y. Muramato , Y. Itaya , T. Nagatsuma , M. Yaita . 110-GHz, 50%-efficiencymushroom-mesa waveguide pin photodiode for a 1.55-µm wavelength. IEEE Photonics Technol. Lett. , 6 , 719 - 721
-
9)
- E.H. Böttcher , E. Dröge , D. Bimberg , A. Umbach , H. Engel . Ultra-wideband (>40 GHz)submicron InGaAs metal-semiconductor-metal photodetectors. IEEE Photonics Technol. Lett. , 9 , 1226 - 1228
-
10)
- Umbach, A., Trommer, D., Siefke, A., Unterbörsch, G.: `50 GHz operation of waveguideintegrated photodiode at 1.55 µm', Proc. 21st European Conf. on OpticalCommunication (ECOC), 17-21 Sept. 1995, Brussels, Belgium, p. 1075–1078.
-
11)
- van Waasen, S., Janssen, G., Bertenburg, R.M., Reuter, R., Tegude, F.J.: `Development of alow-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for20 Gb/s optoelectronic receivers', Proc. 8th Int. Conf. InP and Rel. Mat. (IPRM '96), 22-25 April 1996, Schwäbisch Gmünd, Germany, p. 642–645.
-
1)
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