Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers
Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers
- Author(s): K. Kamath ; P. Bhattacharya ; T. Sosnowski ; T. Norris ; J. Phillips
- DOI: 10.1049/el:19960921
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- Author(s): K. Kamath 1 ; P. Bhattacharya 1 ; T. Sosnowski 1 ; T. Norris 1 ; J. Phillips 1
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View affiliations
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Affiliations:
1: Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, The University of Michigan, Ann Arbor, USA
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Affiliations:
1: Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, The University of Michigan, Ann Arbor, USA
- Source:
Volume 32, Issue 15,
18 July 1996,
p.
1374 – 1375
DOI: 10.1049/el:19960921 , Print ISSN 0013-5194, Online ISSN 1350-911X
We report the room-temperature operating characteristics of InGaAs/GaAs self-organised quantum dot lasers grown by molecular beam epitaxy. The emission wavelength is 1.028 µm and Jth = 650 A/cm2 for a 90 µm × 1 mm broad-area laser. Steady-state and time-resolved photoluminescence measurements confirm that lasing occurs through the e1-hh2 higher-order transition, and the spontaneous recombination time for this transition is ≃ 200 ps.
Inspec keywords: gallium arsenide; photoluminescence; molecular beam epitaxial growth; semiconductor lasers; indium compounds; semiconductor quantum dots; III-V semiconductors; electron-hole recombination; semiconductor epitaxial layers; semiconductor growth; time resolved spectroscopy
Other keywords:
Subjects: Photoluminescence in tetrahedrally bonded nonmetals; Lasing action in semiconductors; Design of specific laser systems; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; II-VI and III-V semiconductors; Vacuum deposition; Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators); Epitaxial growth; Semiconductor superlattices, quantum wells and related structures; Semiconductor lasers
References
-
-
1)
- Y. Arakawa , A. Yariv . Theory of gain, modulation response, andspectral linewidth in AlGaAs quantum well lasers. IEEE J. Quantum Electron. , 1666 - 1674
-
2)
- M. Grundmann , N.N. Ledenstov , O. Stier , D. Bimberg , V.M. Ustinov , P.S. Kopév , Z.I. Alferov . Excited states in self-organizedInAs/GaAs quantum dots: theory and experiment. Appl. Phys. Lett. , 979 - 981
-
3)
- D. Leonard , M. Krishnamurthy , C.M. Reaves , S.P. Denbaars , P.M. Petroff . Direct formation of quantum-sized dots from uniformcoherent islands of InGaAs on GaAs surfaces. Appl. Phys. Lett. , 3202 - 3205
-
4)
- G. Bryant , S. Beaumont , C. Torres . (1990) NATO advanced research workshop on science and engineering of one- andzero-dimensionalsemiconductors, Science and engineering of one- and zero-dimensionalsemiconductors.
-
5)
- G. Wang , S. Fafard , D. Leonard , J.L. Merz , P.M. Petroff . Time-resolvedoptical characterization of InGaAs/GaAs quantum dots. Appl. Phys. Lett. , 2815 - 2817
-
6)
- P. Berger , K. Chang . Role of strain and growth conditions on the growth front profile of InxGa1-xAson GaAs during the pseudomorphic growth regime. Appl. Phys. Lett. , 684 - 686
-
7)
- M. Grundmann . InAs/GaAs quantum dots radiative recombinationfrom zero-dimensional states. Phys. Status Solidi , 249 - 258
-
8)
- G. Bryant . Excitons in quantum boxes: correlation effects and quantumconfinement. Phys. Rev. , 8763 - 8772
-
9)
- R. Heitz . Multiphonon-relaxation processes in self-organized InAs/GaAsquantum dots. Appl. Phys. Lett. , 361 - 363
-
10)
- J. Pamulapati , P.K. Bhattacharya , J. Singh , P.R. Berger , C.W. Snyder , B.G. Orr , R.L. Tober . Realization of in-situ subtwo-dimensional quantum structures by strained layer growth phenomena in theInxGa1-xAs/GaAs system. J. Electron. Mater. , 479 - 483
-
11)
- L. Goldstein , F. Glas , J.Y. Marzin , M.N. Charasse , G. LeRoux . Growth by molecular beam epitaxy and characterization ofInAs/GaAs strained-layer superlattices. Appl. Phys. Lett. , 1099 - 1101
-
12)
- D. Bimberg , N.N. Ledenstov , O. Stier , D. Bimberg , V.M. Ustinov , P.S. Kopév , Z.I. Alferov . InAs-GaAs quantum pyramid lasers: In situ growth, radiativelifetimes and polarisation properties. Jpn. J. Appl. Phys.
-
13)
- D.I. Lubyshev , P.P. Gonzales-Borrero , E. Marega , E. Petitprez , N. LaScala , P. Basmaji . Exciton localization and temperaturestability in self-organized InAs quantum dots. Appl. Phys. Lett. , 205 - 207
-
1)
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