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Highly efficient optical phase modulator in SOI waveguides

Highly efficient optical phase modulator in SOI waveguides

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Published

The realisation of a low-loss, highly efficient, singlemode optical phase modulator in SOI is reported. At a wavelength of 1.5 µm the figure of merit for the device, the induced phase shift per volt per millimetre, is greater than 200°/V/mm. To our knowledge, this is the highest reported value to date. In addition, the device drive current (< 10 mA) is thought to be the lowest yet reported.

Inspec keywords: optical fabrication; phase modulation; silicon-on-insulator; optical planar waveguides; optical modulation

Other keywords: induced phase shift; optical phase modulator; device drive current; SOI waveguides; single-mode devices; figure of merit; 10 mA; 1.5 micrometre

Subjects: Optical fabrication, surface grinding; Optical waveguides; Optical waveguides and couplers; Integrated optics; Integrated optics; Optical beam modulators

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