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Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate

Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate

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© The Institution of Electrical Engineers
Published

A numerical simulation of GaAs MESFETs with semiinsulating substrates impurity-compensated to deep levels is carried out by considering the impact ionisation of the carriers. It is shown that in cases where Cr acts as a hole trap, an increase in drain conductance (‘kink’) arises because holes that are generated by impact ionisation flow into the substrate and are captured by the traps to strongly modulate the space-charge distributions.

Inspec keywords: III-V semiconductors; gallium arsenide; deep levels; hole traps; semiconductor device models; impact ionisation; Schottky gate field effect transistors

Other keywords: kink behaviour; hole trap; semi-insulating substrate; drain conductance; impact ionisation; numerical simulation; space-charge distributions; GaAs:Cr; GaAs; GaAs MESFETs; impurity compensation; deep levels

Subjects: Other field effect devices; Semiconductor device modelling, equivalent circuits, design and testing

References

    1. 1)
      • I. Son , T.W. Tang . Modeling deep-level trap effects in GaAs MESFET's. IEEE Trans. , 632 - 640
    2. 2)
      • K. Horio , H. Yanai , T. Ikoma . Numerical simulation of GaAs MESFET's on the semi-insulating substrate compensated by deep traps. IEEE Trans. , 1778 - 1785
    3. 3)
      • K. Horio , K. Asada , H. Yanai . Two-dimensional simulation of GaAs MESFETs with deep acceptors in the semi-insulating substrate. Solid-State Electron. , 335 - 343
    4. 4)
      • S.H. Lo , C.P. Lee . Two-dimensional simulation of the drain–current transient effect in GaAs MESFETs. Solid-State Electron. , 397 - 401
    5. 5)
      • G.E. Bulman , V.M. Robbins , K.F. Brennan , K. Hess , G.E. Stillman . Experimental determination of impact ionisation coefficients in (100) GaAs. IEEE Electron Device Lett. , 181 - 185
    6. 6)
      • K. Horio . Numerical simulation of trapping effects on drain–current transients of GaAs MESFETs. Electron. Lett. , 295 - 296
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