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Long-wavelength PINFET receiver OEIC on a GaAs-on-InP heterostructure

Long-wavelength PINFET receiver OEIC on a GaAs-on-InP heterostructure

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© The Institution of Electrical Engineers
Published

A long-wavelength PINFET OEIC has been fabricated on a GaAs-on-InP heterostructure for the first time. A receiver sensitivity as high as −31 dBm for 600Mbit/s NRZ has been obtained. The great potential of the GaAs-on-InP hetero-structure for high-performance, long-wavelength OEIC applications has been demonstrated.

Inspec keywords: integrated optoelectronics; III-V semiconductors; optical communication equipment

Other keywords: GaAs-InP; receiver sensitivity; long-wavelength PINFET OEIC; NRZ; 600 Mbit/s

Subjects: Optical communication; Integrated optoelectronics

References

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