Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Delay structures with planar Gunn devices

Delay structures with planar Gunn devices

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A pulse delay obtained with the aid of the domain travelling effect in Gunn devices is described. For this purpose, the planar Gunn devices contain, in addition to a trigger electrode, a capacitive electrode for coupling out the signal. Experimental results are given for the single component and a monolithic integrated cascade circuit. The devices are appropriate for constructing dynamic shift registers in the sub-nanosecond range.

References

    1. 1)
      • W.F. Fallmann , H. Hartnagel , G.P. Srivastava . A Gunn effect shift register. Arch. Elektron. Ubertragungstech. , 473 - 474
    2. 2)
      • T. Sugeta , H. Yanai . Logic and memory applications of the Schottky-gate Gunn-effect digital device. Proc. Inst. Elec. Electron. Eng. , 238 - 240
    3. 3)
      • T. Sugeta , M. Tanimoto , T. Ikoma , H. Yanai . Characteristics and applications of a Schottky-barrier-gate Gunn-effect digital device. IEEE Trans. , 504 - 515
    4. 4)
      • A. Schlachetzki . Pulse rise time in planar Gunn devices. Japan J. Appl. Phys.
    5. 5)
      • K. Mause , A. Schlachetzki , E. Hesse , H. Salow . , Schaltungs-integration mit Gunnelementen am Beispiel eines Schieberegisters im Subnanosekundenbereich.
    6. 6)
      • Mause, K.: `Verzögerungsstrukturen mil Gunnelementen', 65 TBr 8, Technical Report, 1975.
    7. 7)
      • K. Kurumada , T. Mizutani , M. Fujimoto . High-field layers in planar Gunn diodes. J. Phys. D. , L49 - L52
    8. 8)
      • G. Goto , T. Nakamura , T. Isobe . (1974) , Computer analysis on the two-dimensional domain in a planar-type gunn device.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19750314
Loading

Related content

content/journals/10.1049/el_19750314
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address