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Small-signal noise analysis of p+–n–p+ BARITT diodes

Small-signal noise analysis of p+–n–p+ BARITT diodes

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© The Institution of Electrical Engineers
Published

The noise sources in BARITT diodes are described. The noise measure is calculated numerically and compared with experimental results. The optimum noise measure at 8 GHz was determined by varying the device width for given current density and doping density. The best noise measure of 9 dB was obtained for a doping of 2.5 × 1015/cm3 and a current density of 60 A/cm2.

Inspec keywords: transit time devices; noise; solid-state microwave devices

Other keywords: solid state microwave devices; 8 GHz; noise; small signal analysis; transit time devices; BARITT diodes; p-n-p junction

Subjects: Solid-state microwave circuits and devices; Junction and barrier diodes

References

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      • G. Björkman , C.P. Snapp . Small-signal noise behaviour of companion p+–n–p+ and p+–n–v–p+ punchthrough microwave diodes. Electron. Lett. , 501 - 503
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      • H. Statz , R.A. Pucel , H.A. Haus . Velocity fluctuation noise in metal–semiconductor–metal diodes. Proc. Inst. Elec. Electron. Eng. , 644 - 645
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      • D.J. Coleman , S.M. Sze . A low-noise metal–semiconductor–metal (MSM) microwave oscillator. Bell. Syst. Tech. J. , 1695 - 1699
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      • W. Shockley , J.A. Copeland , R.P. James , Per-Olov Lowdin . (1966) The impedance field method of noise calculation in active semiconductor devices, Quantum theory of atoms, molecules, and solid state.
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      • A. Sjölund . Small-signal analysis of punch-through injection microwave devices. Solid-State Electron.
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      • H.A. Haus , H. Statz , R.A. Pucel . Noise measure of metal–semiconductor–metal Schottky-barrier microwave diodes. Electron. Lett. , 667 - 668
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