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1/f voltage noise in silicon planar bipolar transistors

1/f voltage noise in silicon planar bipolar transistors

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Measurements on silicon planar transistors in the frequency range 1 Hz–1 kHz have shown conclusively that 1/f noise is present on the equivalent input noise-voltage generator. In some samples of transistors, correlation between the 1/f components of voltage and current noise was detected. In one sample, an estimate of the correlation coefficient was made, the result being a coefficient of approximately −0.1.

Inspec keywords: bipolar transistors; noise

Subjects: Bipolar transistors

References

    1. 1)
      • P.E. Gray , D. deWitt , A.R. Boothroyd , J.H. Gibbons . (1964) , Physical electronics and circuit models of transistors SEEC series.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19680431
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