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High-index-contrast ridge waveguide laser with thermally oxidised etched facet and metal reflector

High-index-contrast ridge waveguide laser with thermally oxidised etched facet and metal reflector

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A novel GaAs-based high-index-contrast ridge waveguide quantum well heterostructure laser is demonstrated, which features an etched and wet thermally oxidised rear facet with a deposited metal mirror suitable for wafer scale integration. The self-aligned fabrication process utilises a single deep etch step and oxygen-enhanced non-selective wet oxidation of the AlGaAs heterostructure ridge sidewall and the entire exposed facet, including the waveguide core region composed of low-Al content AlGaAs material not readily oxidised by conventional techniques. Singlemode devices exhibiting thresholds as low as 20 mA at λ=808 nm are demonstrated.

References

    1. 1)
      • D. Liang , D.C. Hall . Reduction of etched AlGaAs sidewall roughness by oxygen-enhanced wet thermal oxidation. Appl. Phys. Lett. , 6
    2. 2)
      • D. Liang , J. Wang , J.Y. Huang , J. Yeh , L.J. Mawst , D.C. Hall . Deep-etched native-oxide-confined high-index-contrast AlGaAs heterostructure lasers with 1.3 µm dilute-nitride quantum wells. IEEE J. Sel. Top. Quantum Electron. , 5 , 1324 - 1331
    3. 3)
      • D.A. Francis , C. Chang-Hasnain , K. Eason . Effect of facet roughness on etched-facet semiconductor laser diodes. Appl. Phys. Lett. , 1598 - 1600
    4. 4)
    5. 5)
      • C. Shieh , J. Mantz , K. Alavi , R. Engelmann . Simple batch processing for forming high-reflective mirrors of short-cavity AlGaAs/GaAs lasers. IEEE Photonics Technol. Lett. , 159 - 61
    6. 6)
      • Wang, J., Hall, D.C., Tokranov, V., Oktyabrsky, S.: `Native-oxide-confined high index contrast InAs quantum-dot laser diodes', Proc. 65th DRC Device Research Conf., 2007, South Bend, IN, USA, p. 125–126.
    7. 7)
      • Y. Luo , D.C. Hall . Nonselective wet oxidation of AlGaAs heterostructure waveguides through controlled addition of oxygen. IEEE J. Sel. Top. Quantum Electron. , 6 , 1284 - 1291
    8. 8)
      • C.S. Seibert , D.C. Hall , D. Liang , Z.A. Shellenbarger . Reduction of AlGaAs heterostructure high-index-contrast ridge waveguide scattering loss by sidewall smoothing through oxygen-enhanced wet thermal oxidation. IEEE Photonics Technol. Lett. , 18 - 20
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