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High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors

High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors

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The authors report a very high capacitance ratio of ~10:1 for a heterostructure varactor. To realise this, a new InGaAs/AlAs quantum well-barrier scheme has been fabricated in GaAs technology. The capacitance modulation involves carrier dynamics via the quantum well eigenstates in contrast to the conventional depletion operation mode.

Inspec keywords: semiconductor quantum wells; III-V semiconductors; gallium arsenide; varactors; indium compounds; capacitance; aluminium compounds

Other keywords: capacitance ratio; GaAs-InGaAs-AlAs; carrier dynamics; depletion operation mode; quantum well eigenstates; quantum well-barrier varactors; III-V semiconductors; capacitance modulation

Subjects: Capacitors; Junction and barrier diodes; Semiconductor superlattices, quantum wells and related structures

References

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      • J. Stakes , L. Dillner , S.H. Jones , C. Mann , J. Thornton , J.R. Jones , W. Bishop , E. Kollberg . Effects of self heating on planar heterostructure barrier varactor. IEEE Trans. Electron Devices
    3. 3)
      • K. Krisnamurthi , R.G. Harrison . Milimeter-wave frequency tripling using stackedheterostructure-barrier varactor on InP. IEE Proc. Microw. Antennas Propag. , 4 , 272 - 276
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      • X. Mélique , J. Carbonell , R. Havart , P. Mounaix , O. Vanbésien , D. Lippens . InGaAs/InAlAs/AlAs heterostructure barrier varactors for harmonic multiplication. IEEE Microw. Guid. Wave Lett. , 7 , 254 - 256
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      • X. Mélique , C. Mann , P. Mounaix , O. Vanbésien , F. Mollot , D. Lippens . 5 mW and 5%efficiency 216 GHz InP-based heterostructure barrier varactor tripler. IEEE Microw. Guid. Wave Lett.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19981328
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