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Low excess noise characteristics in thin avalanche region GaAs diodes

Low excess noise characteristics in thin avalanche region GaAs diodes

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Avalanche noise measurements have been performed on a range of homojunction GaAs p+-i-n+ and n+-i-p+ diodes with avalanche widths w ranging from 1.13 to 0.050 µm. These noise measurements show that, contrary to McIntyre's avalanche noise theory, there is large reduction in the avalanche noise as w is decreased for both electron and hole initiated impact ionisation.

Inspec keywords: III-V semiconductors; impact ionisation; avalanche diodes; semiconductor device noise; gallium arsenide

Other keywords: GaAs diodes; excess noise characteristics; n+-i-p+ diodes; homojunction diodes; electron initiated impact ionisation; p+-i-n+ diodes; avalanche noise measurements; hole initiated impact ionisation; thin avalanche region; GaAs; 0.05 to 1.13 micron

Subjects: Junction and barrier diodes

References

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