Optoelectronic VLSI switching chip with greater than 1 Tbit/s potential optical I/O bandwidth
Optoelectronic VLSI switching chip with greater than 1 Tbit/s potential optical I/O bandwidth
- Author(s): A.L. Lentine ; K.W. Goossen ; J.A. Walker ; J.E. Cunningham ; W.Y. Jan ; T.K. Woodward ; A.V. Krishnamoorthy ; B.J. Tseng ; S.P. Hui ; R.E. Leibenguth ; L.M.F. Chirovsky ; R.A. Novotny ; D.B. Buchholz ; R.L. Morrison
- DOI: 10.1049/el:19970567
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- Author(s): A.L. Lentine 1 ; K.W. Goossen 2 ; J.A. Walker 2 ; J.E. Cunningham 2 ; W.Y. Jan 2 ; T.K. Woodward 2 ; A.V. Krishnamoorthy 2 ; B.J. Tseng 3 ; S.P. Hui 3 ; R.E. Leibenguth 4 ; L.M.F. Chirovsky 3 ; R.A. Novotny 1 ; D.B. Buchholz 1 ; R.L. Morrison 1
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View affiliations
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Affiliations:
1: Lucent Technologies, Bell Laboratories, Naperville, USA
2: Lucent Technologies, Bell Laboratories, Holmdel, USA
3: Lucent Technologies, Bell Laboratories, Murray Hill, USA
4: Lucent Technologies, Bell Laboratories, Breiningsville, USA
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Affiliations:
1: Lucent Technologies, Bell Laboratories, Naperville, USA
- Source:
Volume 33, Issue 10,
8 May 1997,
p.
894 – 895
DOI: 10.1049/el:19970567 , Print ISSN 0013-5194, Online ISSN 1350-911X
The authors describe an optoelectronic switching chip with 1024 differential optical inputs and 1024 differential optical outputs with individual channels tested above 600 Mbit/s. The technology for the chip consists of 850 nm GaAs/AlGaAs multiquantum well (MQW) detectors and modulators, flip-chip bonded onto silicon CMOS with substrate removal to allow access to the optical devices.
Inspec keywords: semiconductor quantum wells; integrated optoelectronics; CMOS integrated circuits; photonic switching systems; electro-optical modulation; VLSI; semiconductor switches
Other keywords:
Subjects: Electro-optical devices; Integrated optoelectronics; Photonic switching systems; CMOS integrated circuits
References
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- A.L. Lentine , D.J. Reiley , R.A. Novotny , R.L. Morrison , J.M. Sasian , M.G. Beckman , D.B. Buchholz , S.J. Hinterlong , T.J. Cloonan , G.W. Richards , F.B. McCormick . ATM distribution network using an optoelectronic VLSI switching chip. Appl. Opt.
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- Cloonan, T.J., Richards, G.W.: USA, 5,537,403, .
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- A.V. Krishnamoorthy , A.L. Lentine , K.W. Goossen , J.A. Walker , T.K. Woodward , J.E. Ford , G.F. Aplin , L.A. D'Asaro , S.P. Hui , B. Tseng , R.E. Leibenguth , D. Kossives , D. Dahringer , L.M.F. Chirovsky , D.A.B. Miller . 3-D integration of MQW SEED modulators over active sub-micron CMOS circuits:375 Mbit/s transimpedence receiver-transmitter circuit. IEEE Photonics Technol. Lett. , 1288 - 1290
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- Buchholz, D.B., Lentine, A.L., Novotny, R.A.: `Thermal considerations in the design of optoelectronic device mounts', Topical Meeting on Photonics in Switching, 1995, p. 118–120.
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- A.L. Lentine , K.W. Goossen , J.A. Walker , L.M.F. Chirovsky , L.A. D'Asaro , S.P. Hui , B.J. Tseng , R.E. Leibenguth , J.E. Cunningham , W.Y. Jan , J.M. Kuo , D. Dahringer , D. Kossives , D.D. Bacon , G. Livescu , R.L. Morrison , R.A. Novotny , D.B. Buchholz . Optoelectronic VLSI switching chip with greater than 4000 optical I/Obased on flip chip bonding of GaAs/AlGaAs MQW modulators and detectors to siliconCMOS. J. Sel. Top. Quantum Electron. , 77 - 84
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- T.K. Woodward , A.V. Krishnamoorthy , A.L. Lentine , K.W. Goossen , J.A. Walker , J.E. Cunningham , W. Jan , L.A. D'Asaro , L.M.F. Chirovsky , S.P. Hui , B. Tseng , D. Kossives , D. Dahringer , R.E. Leibenguth . 1 Gbit/s two-beam transimpedence smart pixels optical receivers madefrom hybrid GaAs MQW modulators bonded to 0.8 µm silicon CMOS. IEEE Photonics Technol. Lett. , 422 - 424
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