In this chapter, an analytical current transport model of a p-i-n n-type armchair GNR TFET is developed which is compared with numerical simulation. Two separate current transport models are derived analytically from semi-classical and semi-quantum modeling approaches. Non-equilibrium Green function (NEGF)-based numerical simulation study is also carried out. Results obtained from these two methods are compared with the numerical simulation to establish analytical models. The analytical model in the work of Zhang et al. [2] is revisited and results are also compared with the analytical and numerically simulated results in this work. Furthermore, GNR TFET's performance is studied for varying GNR width using semi-classical, semi-quantum and NEGF simulation-based current transport models. Finally, complementary GNR TFET inverter for digital circuit design is demonstrated through the computation of voltage transfer characteristic from all three modeling approaches.

Chapter Contents:

• 10.1 Introduction—band-to-band tunneling graphene nanoribbon tunnel FETs
• 10.2 Device structure and operation of GNR TFET
• 10.3 Current transport model
• 10.3.1 Semi-classical analytical model
• 10.3.2 Semi-quantum analytical model
• 10.3.3 NEGF-based numerical model: simulation method and approach
• 10.4 Transfer characteristics of GNR TFET
• 10.5 Subthreshold slope of GNR TFET
• 10.6 Estimation of subthreshold swing point, I60
• 10.7 Output characteristics of GNR TFET
• 10.8 Width-dependent performance analysis of GNR TFET
• 10.9 Voltage transfer characteristics of GNR TFET complementary inverter
• 10.10 Conclusion
• References

Inspec keywords: tunnel transistors; tunnelling; digital circuits; field effect transistors; semiconductor junctions; numerical analysis; elemental semiconductors; semiconductor device models; nanoribbons; graphene; Green's function methods; invertors; graphene devices

Other keywords: C; GNR width; analytical current transport model; tunnel field-effect transistors-technologies; digital circuit design; semiquantum modeling; tunnel junctions; complementary GNR TFET inverter; voltage transfer characteristic; nonequilibrium Green function-based numerical simulation; p-i-n n-type armchair GNR TFET

Subjects: Power electronics, supply and supervisory circuits; Other field effect devices; Semiconductor device modelling, equivalent circuits, design and testing; Fullerene, nanotube and related devices; Digital electronics