Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm
Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm
- Author(s): C.-J. Choi ; M.-G. Jang ; Y.-Y. Kim ; M.-S. Jun ; T.-Y. Kim ; S.-J. Lee
- DOI: 10.1049/el:20081645
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- Author(s): C.-J. Choi 1 ; M.-G. Jang 1 ; Y.-Y. Kim 1 ; M.-S. Jun 1 ; T.-Y. Kim 1 ; S.-J. Lee 2
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View affiliations
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Affiliations:
1: IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (ETRI), Daejon, Korea
2: Department of Physics, Hanyang University, Seoul, Korea
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Affiliations:
1: IT Convergence Technology Research Division, Electronics and Telecommunications Research Institute (ETRI), Daejon, Korea
- Source:
Volume 44, Issue 2,
17 January 2008,
p.
159 – 160
DOI: 10.1049/el:20081645 , Print ISSN 0013-5194, Online ISSN 1350-911X
The electrical and structural properties of platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors with physical gate lengths scaled down to 20 nm have been investigated. Constant built-in potential clipped at source/drain contacts for shorter channel length is responsible for negative shift of threshold voltage with decreasing gate length.
Inspec keywords: electric properties; Schottky barriers; MOSFET
Other keywords:
Subjects: Insulated gate field effect transistors
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