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Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm

Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm

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The electrical and structural properties of platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors with physical gate lengths scaled down to 20 nm have been investigated. Constant built-in potential clipped at source/drain contacts for shorter channel length is responsible for negative shift of threshold voltage with decreasing gate length.

References

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      • M. Shin , M. Jang , S. Lee . Quantum mechanical simulation of charge distribution in Schottky barrier MOSFETs. J. Korean Phys. Soc. , S547 - S550
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